SI1865DDL-T1-GE3

SI1865DDL-T1-GE3 is a p- and n-channel MOSFET load switch with level shift. The low on-resistance p-channel TrenchFET is tailored for use as a load switch. The n-channel, with an external resistor, can be used as a level shift to drive the p-channel load-switch. The n-channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5V. The Si1865DDL operates on supply lines from 1.8V to 12V, and can drive loads up to 1.1A. The application includes load switch with level-shift, slew-rate control, and portable / consumer devices.

• Low RDS(on) TrenchFET®, 1.5V to 8V logic level control
• 2000V ESD protection on input switch, VON/OFF, adjustable slew-rate
• Input voltage range from 1.8 to 12V, load current is ±1.1A (TA = 25°C, continuous)
• Diode forward voltage is -0.84V typ (IS = -0.8A, TJ = 25°C)
• On-resistance (p-channel) is 0.165ohm typ VON/OFF = 1.5V, VIN = 4.5V, ID = 1.1A)
• Level-shift configuration
• Reverse leakage current is 1μA max (VIN = 12V, VON/OFF = 0V, TJ = 25°C)
• Maximum power dissipation is 0.357W (TJ = 25°C)
• ESD rating, MIL-STD-883D human body model (100pF, 1500 ohm) is \2kV
• SC-70 package, operating junction temperature range from -55 to 150°C