FDG6332C

The FDG6332C is a N/P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain superior switching performance. This device has been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive and packages are impractical. It is suitable for use with DC-to-DC converters, load switch and LCD display inverter applications.

• Low gate charge
• High performance Trench technology for extremely low RDS (ON)
• Small footprint
• Low profile

Sovellukset

Industrial, Power Management

Varoitukset

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.