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Määrä | |
---|---|
1+ | 1,460 € |
10+ | 1,000 € |
25+ | 0,916 € |
50+ | 0,832 € |
100+ | 0,748 € |
500+ | 0,600 € |
Tuotetiedot
Tuotteen yleiskatsaus
The FODM8801BR2 is a high-temperature Phototransistor Optocoupler utilizing leading-edge, process technology to achieve high operating temperature characteristics, up to 125°C. The OptoHiT™ series optocoupler consists of an aluminium gallium arsenide (AlGaAs) infrared light emitting diode (LED) optically coupled to a phototransistor. It delivers high current transfer ratio at very low input current. The input-output isolation voltage (VISO) is rated at 3750VACRMS. It is suitable for ground-loop isolation, signal-noise isolation and DC-DC converter.
- Utilizing proprietary process technology to achieve high operating temperature up to 125°C
- Excellent CTR linearity at high temperature
- High isolation voltage
- Applicable to infrared ray reflow, 245°C
- <gt/>5mm Creepage and clearance distance
- 565V maximum working insulation voltage
- 6000V high allowable overvoltage
Varoitukset
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Tekniset tiedot
1 Channel
4Pins
3.75kV
75V
No SVHC (27-Jun-2024)
SSOP
20mA
130%
-
Tekniset asiakirjat (2)
Lainsäädäntö ja ympäristöasiat
Maa, jossa viimeinen merkittävä valmistusvaihe on tehtyAlkuperämaa:Thailand
Maa, jossa viimeinen merkittävä valmistusvaihe on tehty
RoHS
RoHS
Tuotteen vaatimustenmukaisuustodistus