Tarvitsetko enemmän?
Määrä | |
---|---|
1+ | 6,710 € |
10+ | 6,110 € |
25+ | 6,000 € |
50+ | 5,940 € |
100+ | 5,420 € |
250+ | 5,350 € |
500+ | 5,020 € |
Tuotetiedot
Tuotteen yleiskatsaus
MT29F8G08ABBCA is a NAND flash memory. NAND flash device include an asynchronous data interface for high-performance I/O operations. This device use a highly multiplexed 8-bit bus (I/Ox) to transfer commands, address, and data. There are five control signals used to implement the asynchronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals control hardware write protection and monitor device status (R/B#). This hardware interface creates a low pin-count device with a standard pinout that remains the same from one density to another, enabling future upgrades to higher densities with no board redesign.
- Single-level cell (SLC) technology, asynchronous I/O performance
- Array performance, program page is 200µs (typical)
- Command set is ONFI NAND flash protocol, advanced command set
- Program page cache mode, read page cache mode, one-time programmable (OTP) mode
- Operation status byte provides software method for detecting, operation completion
- Pass/fail condition, write-protect status, quality and reliability
- RESET (FFh) required as first command after power-on
- 8Gb density, 8bit device width, SLC level
- 1.8V (1.7–1.95V) operating voltage, asynchronous interface
- 63-ball VFBGA (9 x 11 x 1.0mm) package, industrial operating temperature range from –40°C to +85°C
Tekniset tiedot
SLC NAND
1G x 8bit
VFBGA
50MHz
1.7V
1.8V
-40°C
1.8V Parallel NAND Flash Memories
8Gbit
Parallel
63Pins
22ns
1.95V
Surface Mount
85°C
No SVHC (17-Dec-2015)
Tekniset asiakirjat (1)
Lainsäädäntö ja ympäristöasiat
Maa, jossa viimeinen merkittävä valmistusvaihe on tehtyAlkuperämaa:Taiwan
Maa, jossa viimeinen merkittävä valmistusvaihe on tehty
RoHS
RoHS
Tuotteen vaatimustenmukaisuustodistus