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Määrä | |
---|---|
1+ | 2,990 € |
10+ | 2,260 € |
25+ | 2,060 € |
50+ | 2,030 € |
100+ | 2,000 € |
250+ | 1,890 € |
500+ | 1,840 € |
1000+ | 1,700 € |
Tuotetiedot
Tuotteen yleiskatsaus
The IR2184PBF is a high voltage high speed power MOSFET and IGBT Half-bridge Driver with dependent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technology enables ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output and down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive a N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V.
- Tolerant to negative transient voltage DV/DT Immune
- Under-voltage lockout for both channels
- Matched propagation delay for both channels
- Lower DI/DT gate driver for better noise immunity
- Logic and power ground ±5V offset
Sovellukset
Industrial, Consumer Electronics, Alternative Energy, Power Management
Varoitukset
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Tekniset tiedot
2Channels
High Side and Low Side
8Pins
Through Hole
1.9A
10V
-40°C
680ns
-
-
-
IGBT, MOSFET
DIP
Non-Inverting
2.3A
20V
125°C
270ns
-
No SVHC (21-Jan-2025)
Tekniset asiakirjat (2)
Liitännäistuotteet
1 tuote löytyi
Lainsäädäntö ja ympäristöasiat
Maa, jossa viimeinen merkittävä valmistusvaihe on tehtyAlkuperämaa:Malaysia
Maa, jossa viimeinen merkittävä valmistusvaihe on tehty
RoHS
RoHS
Tuotteen vaatimustenmukaisuustodistus