Tarvitsetko enemmän?
| Määrä | |
|---|---|
| 1+ | 6,970 € |
| 5+ | 6,950 € |
| 10+ | 6,920 € |
| 50+ | 5,510 € |
| 100+ | 5,410 € |
| 250+ | 5,400 € |
Tuotetiedot
Tuotteen yleiskatsaus
The IPW65R045C7 is a 650V N-channel CoolMOS™ Power MOSFET providing the world's lowest RDS (on) with low switching losses and efficiency improvements over the full load range. The new CoolMOS™ C7 series offers a ~50% reduction in turn-off losses (Eoss) compared to the CoolMOS™ CP, offering a GaN-like level of performance in PFC, TTF and other hard-switching topologies. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power conversion systems. The latest state-of-the-art generation of high voltage power MOSFETs makes AC-DC power supplies more efficient, more compact, lighter and cooler than ever before.
- Reduced energy stored in output capacitance (Eoss)
- Lower gate charge
- Space-saving through reduction of parts
- Improved safety margin
- Lowest conduction losses
- Low switching losses
- Better light load efficiency
- Increasing power density
Sovellukset
Communications & Networking, Computers & Computer Peripherals, Alternative Energy, Power Management
Tekniset tiedot
N Channel
46A
TO-247
10V
227W
150°C
-
No SVHC (21-Jan-2025)
650V
0.04ohm
Through Hole
3.5V
3Pins
-
-
Tekniset asiakirjat (3)
Vaihtoehdot osanumerolle IPW65R045C7FKSA1
4 tuotetta löydetty
Liitännäistuotteet
3 tuotetta löydetty
Lainsäädäntö ja ympäristöasiat
Maa, jossa viimeinen merkittävä valmistusvaihe on tehtyAlkuperämaa:China
Maa, jossa viimeinen merkittävä valmistusvaihe on tehty
RoHS
RoHS
Tuotteen vaatimustenmukaisuustodistus