Tarvitsetko enemmän?
| Määrä | |
|---|---|
| 1+ | 8,910 € |
| 5+ | 7,520 € |
| 10+ | 6,130 € |
| 50+ | 5,640 € |
| 100+ | 5,130 € |
| 250+ | 5,030 € |
Tuotetiedot
Tuotteen yleiskatsaus
The IPP65R045C7 is a 650V CoolMOS™ C7 N-channel Power MOSFET features lower gate charge. This CoolMOS™ is a revolutionary technology for high voltage power MOSFET, designed according to the super-junction(SJ) principle and pioneered by Infineon Technologies. The CoolMOS™ C7 combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fast switching super-junction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.
- Revolutionary best-in-class RDS (ON)
- Reduced energy stored in output capacitance (EOSS)
- Space saving through use of smaller packages or reduction of parts
- Improved safety margin and suitable for both SMPS and Solar Inverter applications
- Lowest conduction losses
- Low switching losses
- Better light load efficiency
- Increasing power density
- Outstanding CoolMOS™ quality
Sovellukset
Industrial, Power Management, Alternative Energy, Communications & Networking
Tekniset tiedot
N Channel
46A
TO-220
10V
227W
150°C
-
No SVHC (21-Jan-2025)
650V
0.045ohm
Through Hole
3.5V
3Pins
-
-
Tekniset asiakirjat (1)
Liitännäistuotteet
3 tuotetta löydetty
Lainsäädäntö ja ympäristöasiat
Maa, jossa viimeinen merkittävä valmistusvaihe on tehtyAlkuperämaa:Malaysia
Maa, jossa viimeinen merkittävä valmistusvaihe on tehty
RoHS
RoHS
Tuotteen vaatimustenmukaisuustodistus