BFP640ESDH6327XTSA1

The BFP 640ESD H6327 is a robust low-noise NPN Bipolar RF Transistor based on Infineon's reliable high volume silicon germanium carbon hereto junction bipolar technology. The device is especially suited for mobile applications in which low power consumption is a key requirement. The typical transition frequency is approximately 45GHz, hence the device offers high power gain at frequencies up to 10GHz in amplifier applications. The transistor is fitted with internal protection circuits, which enhance the robustness against electrostatic discharge (ESD) and high levels of RF input power.

• 2kV ESD robustness (HBM) due to integrated protection circuits
• High maximum RF input power of 21dBm
• Easy to use
• Halogen-free

Sovellukset

Industrial, RF Communications, Power Management