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Tuotteen yleiskatsaus
CoolGaN™ and similar GaN switches require a continuous gate current of a few mA in their "on" state. Besides, due to low threshold voltage and extremely fast switching transients, a negative "off" voltage level may be needed. Infineon's GaN EiceDRIVER™ solves these issues with very low effort. The two output stages shown below enable a zero “off" level to eliminate any duty-cycle dependence. In addition, the differential topology is able to provide negative gate drive without the need for a negative supply voltage. However, it requires a floating supply voltage not compatible with bootstrapping.
- Dedicated gate driver ICs for Infineon’s high voltage GaN power switches (CoolGaN™, X-GaN™)
- Single output supply voltage (typ. 8 V, floating)
- Switching behavior independent of duty-cycle (2"off" voltage levels)
- Differential concept to ensure negative gate drive voltage under any condition
- Fast input-to-output propagation (37 ns) with excellent stability (+7/-6ns)
- Galvanic input-to-output isolation based on coreless transformer (CT) technology
- Common mode transient immunity (CMTI) <gt/> 200 V/ns
Sovellukset
DC/DC Converters
Varoitukset
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Tekniset tiedot
1Channels
High Side
SOIC
SOIC
-
-
3.5V
85°C
37ns
-
No SVHC (21-Jan-2025)
Isolated
GaN HEMT
16Pins
Surface Mount
-
3V
-40°C
37ns
GaN EiceDRIVER
MSL 1 - Unlimited
Tekniset asiakirjat (2)
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Lainsäädäntö ja ympäristöasiat
Maa, jossa viimeinen merkittävä valmistusvaihe on tehtyAlkuperämaa:China
Maa, jossa viimeinen merkittävä valmistusvaihe on tehty
RoHS
RoHS
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