HMC384LP4E

HM384LP4E is a GaAs InGaP heterojunction bipolar transistor (HBT) MMIC VCO with integrated resonators, negative resistance devices, varactor diodes, and buffer amplifier. The VCO’s phase noise performance is excellent over temperature, shock, vibration and process due to the oscillator’s monolithic structure. Typical Low noise MMIC VCO w/Buffer amplifier for wireless infrastructure, industrial controls, test equipment, military.

• No external resonator needed
• Frequency range from 2.05 to 2.25GHz (TA = +25° C, Vcc = +3V)
• Power output is 3.5dBm (typ, TA = +25°C, Vcc = +3V)
• SSB phase noise at 100KHz offset, Vtune= +5V at RFOUT is -112dBc/Hz (typ, TA = +25°C, Vcc = +3V)
• Tune voltage range from 0 to 10V (Vtune, TA = +25°C, Vcc = +3V)
• Supply current (Icc) (Vcc = +3V) is 35mA (typ, TA = +25°C, Vcc = +3V)
• Tune port leakage current (Vtune= 13V) is 10µA (max, TA = +25°C, Vcc = +3V)
• Output return loss is 6dB (typ, TA = +25°C, Vcc = +3V)
• Frequency drift rate is 0.25MHz/°C (typ, TA = +25°C, Vcc = +3V)
• QFN package, operating temperature range from -40°C to +85°C

Huomautuksia

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