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SIR1309DP-T1-GE3
Power MOSFET, P Channel, 30 V, 65.7 A, 7300 µohm, PowerPAK SO, Surface Mount
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ManufacturerVISHAY
Manufacturer Part NoSIR1309DP-T1-GE3
Order Code3954175
Product RangeTrenchFET Gen IV Series
Technical Datasheet
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIR1309DP-T1-GE3
Order Code3954175
Product RangeTrenchFET Gen IV Series
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id65.7A
Drain Source On State Resistance7300µohm
Transistor Case StylePowerPAK SO
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation56.8W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV Series
Qualification-
SVHCLead (21-Jan-2025)
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
65.7A
Transistor Case Style
PowerPAK SO
Rds(on) Test Voltage
10V
Power Dissipation
56.8W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
7300µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.5V
No. of Pins
8Pins
Product Range
TrenchFET Gen IV Series
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001
Product traceability