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SVD5865NLT4G
Power MOSFET, N Channel, 60 V, 46 A, 0.013 ohm, TO-252 (DPAK), Through Hole
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Product Information
ManufacturerONSEMI
Manufacturer Part NoSVD5865NLT4G
Order Code2630367
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id46A
Drain Source On State Resistance0.013ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation71W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
QualificationAEC-Q101
SVHCTo Be Advised
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Product Overview
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
46A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
71W
Operating Temperature Max
175°C
Qualification
AEC-Q101
SVHC
To Be Advised
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.013ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Vietnam
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Vietnam
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000426