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Available to Order
Manufacturer Standard Lead Time: 16 week(s)
Quantity | Price (ex VAT) |
---|---|
2475+ | € 0.402 |
Price for:Each
Minimum: 2475
Multiple: 2475
€ 994.95 (ex VAT)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMJD112-1G
Order Code2727978
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo100V
Power Dissipation Pd20W
DC Collector Current2A
RF Transistor CaseTO-252 (DPAK)
No. of Pins3Pins
DC Current Gain hFE12000hFE
Transistor MountingThrough Hole
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
Product Overview
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
NPN
Power Dissipation Pd
20W
RF Transistor Case
TO-252 (DPAK)
DC Current Gain hFE
12000hFE
Operating Temperature Max
150°C
Qualification
AEC-Q101
Collector Emitter Voltage V(br)ceo
100V
DC Collector Current
2A
No. of Pins
3Pins
Transistor Mounting
Through Hole
Product Range
-
SVHC
Lead (27-Jun-2024)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000454
Product traceability