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KSB772YSTU
Bipolar (BJT) Single Transistor, PNP, 30 V, 3 A, 10 W, TO-126, Through Hole
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| Quantity | Price (ex VAT) |
|---|---|
| 5+ | € 0.592 |
| 10+ | € 0.578 |
Price for:Each
Minimum: 5
Multiple: 5
€ 2.96 (ex VAT)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoKSB772YSTU
Order Code2575353
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage Max30V
Continuous Collector Current3A
Power Dissipation10W
Transistor Case StyleTO-126
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency80MHz
DC Current Gain hFE Min30hFE
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (23-Jan-2024)
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Product Overview
- PNP epitaxial silicon transistor
Technical Specifications
Transistor Polarity
PNP
Continuous Collector Current
3A
Transistor Case Style
TO-126
No. of Pins
3Pins
DC Current Gain hFE Min
30hFE
Product Range
-
MSL
-
Collector Emitter Voltage Max
30V
Power Dissipation
10W
Transistor Mounting
Through Hole
Transition Frequency
80MHz
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (23-Jan-2024)
Technical Docs (3)
Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001591