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DMP1045U-7
Power MOSFET, P Channel, 12 V, 4 A, 0.031 ohm, SOT-23, Surface Mount
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| Quantity | Price (ex VAT) |
|---|---|
| 100+ | € 0.174 |
| 500+ | € 0.129 |
| 1500+ | € 0.114 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
€ 22.40 (ex VAT)
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Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMP1045U-7
Order Code3127351RL
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds12V
Continuous Drain Current Id4A
On Resistance Rds(on)0.026ohm
Drain Source On State Resistance0.031ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max550mV
Power Dissipation Pd800mW
Power Dissipation800mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (27-Jun-2024)
Product Overview
DMP1045U-7 is a P-channel enhancement mode MOSFET. This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) while maintaining superior switching performance, which makes the device ideal for high-efficiency power management applications. Typical applications include power management functions, DC-DC converters and analogue switches.
- Low on-resistance, low input capacitance, fast switching speed
- Low input/output leakage, ESD protected
- Drain-source voltage is -12V at TA = +25°C
- Gate-source voltage is ±8V at TA = +25°C
- Continuous drain current is 4A at TA = +25°C, VGS = -4.5V, steady state
- Pulsed drain current (10μs pulse, duty cycle = 1%) is 40A at TA = +25°C
- Total power dissipation is 0.8W at TA = +25°C
- Static drain-source on-resistance is 31mohm max at VGS = -4.5V, ID = -4.0A, TA = +25°C
- SOT23 case
- Operating and storage temperature range from -55 to +150°C
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
12V
On Resistance Rds(on)
0.026ohm
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Power Dissipation Pd
800mW
No. of Pins
3Pins
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Channel Type
P Channel
Continuous Drain Current Id
4A
Drain Source On State Resistance
0.031ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
550mV
Power Dissipation
800mW
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00185
Product traceability